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| D44H8 D44H11 NPN SILICON POWER TRANSISTORS s s s SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIER DESCRIPTION The D44H8, and D44H11 are silicon multiepitaxial planar NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D44H8, D44H11 are complementary with D45H8, D45H11. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEO V EBO IC I CM P t ot T stg Tj Parameter D44H8 Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c 25 C Storage Temperature Max. O perating Junction Temperature o Value D44H11 80 5 10 20 50 -65 to 150 150 60 Uni t V V A A W o o C C June 1997 1/5 D44H8/D44H11 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.5 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = rated V CEO V EB = 5V I C = 100 mA for D44H8 for D44H11 IC = 8 A IC = 8 A IC = 2 A IC = 4 A I B = 0.4 A I B = 0.8 A V CE = 1 V V CE = 1 V 60 40 Min. Typ . Max. 10 100 Un it A A V CEO(sus ) Collector-Emitter Sustaining Voltage V CE(sat ) V BE(s at) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain 60 80 1 1.5 V V V V Pulsed: Pulse duration = 300 s, duty cycle 2 % Safe Operating Area Derating Curves 2/5 D44H8/D44H11 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/5 D44H8/D44H11 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G 4/5 H2 P011C D44H8/D44H11 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5 |
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